TIP31F datasheet(2/6 Pages) POINN

2 / 6 page

TIP31D, TIP31E, TIP31F

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 5)

IB = 0

TIP31D

TIP31E

TIP31F

120

140

160

ICES

Collector-emitter

cut-off current

VCE = 160 V

VCE = 180 V

VCE = 200 V

VBE = 0

TIP31D

TIP31E

TIP31F

0.2

ICEO

Collector cut-off

current

VCE = 90 V

IB = 0

0.3

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

IC =

1 A

IC =

3 A

(see Notes 5 and 6)

VCE(sat)

Collector-emitter

saturation voltage

IB = 750 mA

IC =

3 A

(see Notes 5 and 6)

2.5

VBE

Base-emitter

voltage

VCE =

4 V

IC =

3 A

(see Notes 5 and 6)

1.8

hfe

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 kHz

fe|

Small signal forward

current transfer ratio

VCE = 10 V

IC = 0.5 A

f = 1 MHz

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

3.125

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = 1 A

VBE(off) = -4.3 V

IB(on) = 0.1 A

RL = 30 Ω

IB(off) = -0.1 A

tp = 20 µs, dc ≤ 2%

0.5

µs

toff

Turn-off time

µs

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