ST10F269ZX datasheet(29/184 Pages) STMICROELECTRONICS

29 / 184 page

ST10F269

5 - INTERNAL FLASH MEMORY

29/184

;R12 contains the segment offset address to be

;programmed

;R13 contains the data to be programmed

EXTS

R11, #1

;use EXTended addressing for next MOV instruction

MOV

[R12], R13

;command cycle 4: the EPC starts execution of

;Programming Command

Data_Polling:

EXTS

R11, #1

;use EXTended addressing for next MOV instruction

MOV

R7, [R12]

;read Flash Status register (FSB) in R7

MOV

R6, R7

;save it in R6 register

;Check if FSB.7 = Data.7 (i.e. R7.7 = R13.7)

XOR

R7, R13

JNB

R7.7, Prog_OK

;Check if FSB.5 = 1 (Programming Error)

JNB

R6.5, Data_Polling

;Programming Error: verify is Flash programmed

;data is OK

EXTS

R11, #1

;use EXTended addressing for next MOV instruction

MOV

R7, [R12]

;read Flash Status register (FSB) in R7

;Check if FSB.7 = Data.7

XOR

R7, R13

JNB

R7.7, Prog_OK

;Programming failed: Flash remains in Write

;Operation.

;To go back to normal Read operations, a Read/Reset

;command

;must be performed

Prog_Error:

MOV

R7, #0F0h

;load register R7 with Read/Reset command

EXTS

R11, #1

;use EXTended addressing for next MOV instruction

MOV

[R12], R7

;address is don’t care for Read/Reset command

...

;here place specific Error handling code

...

;When programming operation finished succesfully,

;Flash is set back automatically to normal Read Mode

Prog_OK:

....

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