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P4C1024L55CWC Fiches technique(PDF) 6 Page - Pyramid Semiconductor Corporation

No de pièce P4C1024L55CWC
Description  LOW POWER 128K x 8 CMOS STATIC RAM
PDF  11 Pages
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Fabricant  PYRAMID [Pyramid Semiconductor Corporation]
Site Internet  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1024L55CWC Fiches technique(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C1024L
Page 6 of 10
Document # SRAM125 REV C
D
IN
Write
Active
Read
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE
CE
CE
CE
CE CONTROLLED)(6)
* including scope and test fixture.
Note:
Because of the high speed of the P4C1024L, care must be taken
when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance
leads that cause supply bounce must be avoided by bringing the V
CC
and ground planes directly up to the contactor fingers. A 0.01 µF
high frequency capacitor is also required between V
CC and ground.
To avoid signal reflections, proper termination must be used; for
example, a 50
Ω test environment should be terminated into a 50Ω
load with 1.77V (Thevenin Voltage) at the comparator input, and a
589
Ω resistor must be used in series with D
OUT to match 639Ω
(Thevenin Resistance).
AC TEST CONDITIONS
TRUTH TABLE
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Fig. 1 and 2
Mode
Standby
Standby
D
OUT Disabled
Standby
Power
I/O
WE
WE
WE
WE
WE
OE
OE
OE
OE
OE
CE
2
CE
CE
CE
CE
CE
1
High Z
High Z
D
OUT
X
X
H
H
L
X
X
H
L
X
X
L
H
H
H
H
X
L
L
L
Standby
Active
Active
High Z
Figure 1. Output Load
Figure 2. Thevenin Equivalent



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