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P4C422 Fiches technique(PDF) 4 Page - Pyramid Semiconductor Corporation

No de pièce P4C422
Description  HIGH SPEED 256 x 4 STATIC CMOS RAM
PDF  10 Pages
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Fabricant  PYRAMID [Pyramid Semiconductor Corporation]
Site Internet  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C422 Fiches technique(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C422
Page 4 of 10
Document # SRAM101 REV. A
Max
AC CHARACTERISTICS—WRITE CYCLE
(V
CC = 5V ± 10% except as noted, All Temperature Ranges)
(2)
TIMING WAVEFORM OF WRITE CYCLE
Parameter
Write Cycle Time (5)
Write Enable to High-Z (6)
Write Recovery Time
Write Pulse Width (5,7)
Data Setup Time Prior to Write (5)
Data Hold Time (5)
Address Setup Time (5,7)
Address Hold Time (5)
Chip Select Setup Time (5)
Chip Select Hold Time (5)
Sym.
t
WC
t
ZWS
t
WR
t
W
t
WSD
t
WHD
t
WSA
t
WHA
t
WSCS
t
WHCS
-10*
-12
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min
Min Max Min Max
10
8
0
2
8
8
12
9
0
10
10
15
11
0
2
12
12
20
13
2
15
15
25
15
5
20
20
35
20
5
30
25
ns
ns
ns
ns
ns
*V
CC = 5V ± 5%
22
5
55
ns
00
0
2
5
5
ns
22
4
5
5
5
ns
0
00
2
5
5
ns
22
5
5
5
ns



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