Electrical ratings

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z

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Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

12

A

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

300

mJ

Table 4.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage

Igs=±1mA

(Open Drain)

30

V