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GD30MPS12H Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce GD30MPS12H
Description  SIC Schottky Diode
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GD30MPS12H Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  GD30MPS12H Datasheet HTML 1Page - Inchange Semiconductor Company Limited GD30MPS12H Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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ISCD7037
eq GD30MPS12H
SIC Schottky Diode
www.iscsemi.com
1
DESCRIPTION
· High surge current capability
· Fast Switching
· Low Thermal Resistance
APPLICATIONS
· Solar inverter
· Power Factor Correction (PFC)
· Switch mode power supply
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Recurrent Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
TC= 100℃
55
A
TC= 135℃
38
TC= 148℃
30
IFSM
Peak Forward Surge Current
tp = 10 ms,Half Sine Wave
TC = 25 ℃
240
A
TC = 150 ℃
192
Ptot
Power Dissipation
TVJ = 25℃
313
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.48
℃
/W


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