Data Sheet

ADL8121

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.025 GHz to 12 GHz

Rev. A

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FEATURES

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Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz

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Single positive supply (self biased)

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High gain: 16.5 dB typical at 0.025 GHz to 10 GHz

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High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz

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RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

APPLICATIONS

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Test instrumentation

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Military communications

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Military radar

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Telecommunications

GENERAL DESCRIPTION

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 0.025 GHz to 12 GHz.

The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical

noise figure, and a typical output third-order intercept (OIP3) of

36 dBm across the 0.025 GHz to 10 GHz frequency range, requir-

ing only 95 mA from a 5 V supply voltage. The saturated output

power (PSAT) of 21.5 dBm typical across the 0.025 GHz to

10 GHz frequency range enables the low noise amplifier (LNA)

to function as a local oscillator (LO) driver for many of Analog

Devices, Inc., balanced, in-phase and quadrature (I/Q) or image

rejection mixers.

The ADL8121 also features inputs and outputs that are internally

matched to 50 Ω, making the device ideal for surface-mounted

technology (SMT)-based and is housed in a RoHS-compliant, 2 mm

× 2 mm, 6-lead LFCSP.

FUNCTIONAL BLOCK DIAGRAM

Figure 1.