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2SC6099 Fiches technique(PDF) 2 Page - Sanyo Semicon Device

No de pièce 2SC6099
Description  NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
PDF  4 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6099 Fiches technique(HTML) 2 Page - Sanyo Semicon Device

  2SC6099 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6099 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6099 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6099 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6099
No. A0435-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=300mA
300
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
13
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=100mA
110
165
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6.5
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
1100
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7518-003
7003-003
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
VR10
RB
VCC=50V
10IB1= --10IB2=IC=0.5A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2



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