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1SS286 Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce 1SS286
Description  Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
PDF  5 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

1SS286 Fiches technique(HTML) 2 Page - Renesas Technology Corp

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1SS286
REJ03G0142-0300 Rev.3.00 May 24, 2007
Page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
25
V
Forward current
IF
35
mA
Power dissipation
Pd
150
mW
Junction temperature
Tj
100
°C
Storage temperature
Tstg
−55 to +100
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.60
V
IF = 10 mA
Reverse voltage
VR
25
—
—
V
IF = 10 µA
Reverse current
IR
—
—
10
nA
VR = 10 V
Capacitance
C
—
—
1.20
pF
VR = 0 V, f = 1 MHz
Capacitance deviation
*3
∆C
—
—
0.10
pF
VR = 0 V, f = 1 MHz
Forward voltage deviation
*3
∆V
F
—
—
10
mV
IF = 10mA
ESD-Capability
*1
—
10
—
—
V
C = 200 pF, R = 0
Ω , Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V
2. Each group shall unify a multiple of 4 diodes
3. Not applied to taping-type products.



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