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M29F080D Fiches technique(PDF) 28 Page - STMicroelectronics |
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M29F080D Fiches technique(HTML) 28 Page - STMicroelectronics |
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28 / 37 page ![]() M29F080D 28/37 Table 18. CFI Query System Interface Information Note: 1. Not supported in the CFI Address Data Description Value 1Bh 45h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 4.5V 1Ch 55h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 5.5V 1Dh 00h VPP [Programming] Supply Minimum Program/Erase voltage 00h not supported NA 1Eh 00h VPP [Programming] Supply Maximum Program/Erase voltage 00h not supported NA 1Fh 04h Typical timeout per single byte program = 2n µs 16µs 20h 00h Typical timeout for minimum size write buffer program = 2n µs NA 21h 0Ah Typical timeout per individual block erase = 2n ms 1s 22h 00h Typical timeout for full chip erase = 2n ms see note (1) 23h 04h Maximum timeout for byte program = 2n times typical 256µs 24h 00h Maximum timeout for write buffer program = 2n times typical NA 25h 03h Maximum timeout per individual block erase = 2n times typical 8s 26h 00h Maximum timeout for chip erase = 2n times typical see note (1) |
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