GMA64 datasheet(1/2 Pages) GTM

No de pièce	GMA64

Description	NPN EPITAXIAL PLANAR TRANSISTOR

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Fabricant	GTM [GTM CORPORATION]

Site Internet	http://www.gtm.com.tw

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GMA64

1/2

ISSUED DATE :2005/04/04

REVISED DATE :

G

G M

M A

A6644

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A LL P

P LL A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain.

Features

&High DC current gain

&Complementary with GMA14

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature Range

TsTG

-55 ~ +150

Collector to Base Voltage

VCBO

-30

V

Collector to Emitter Voltage

VCES

-30

V

Emitter to Base Voltage

VEBO

-10

V

Collect Current(DC)

IC

-500

mA

Total Power Dissipation

PD

1

W

Electrical Characteristics(Ta = 25 : )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

V

IC=-100uA, IE=0

BVCES

-30

-

V

IC=-100uA, IB=0

BVEBO

-10

-

V

IE=-10uA, IC=0

ICBO

-

-100

nA

VCB=-30V, IE=0

IEBO

-

-100

Na

VEB=-10V, IC=0

*VCE(sat)1

-

-1.5

V

IC=-100mA, IB=-0.1mA

*VBE(on)

-

-2.0

V

IC=-100mA, VCE=-5V

*hFE1

10

-

K

VCE=-5V, IC=-10mA

*hFE2

20

-

K

VCE=-5V, IC=-100mA

ft

125

-

MHz

VCE=-5V, IC=-10mA, f=100MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

SOT-89

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