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UG18DCT Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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UG18DCT Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Ultrafast Recovery Diode UG18DCT www.iscsemi.com 1 FEATURES · Low forward voltage drop · Low switching losses, high efficiency · High surge current capability APPLICATIONS · For use in high frequency rectifier of switching mode powersupplies, inverters, freewheeling diodes, DC/DC converters,and other power switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 18 A IFSM Peak forward surge current 8.3 ms single half sine-wavesuperimposed on rated load per diode 175 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per leg 4.0 ℃ /W |
Numéro de pièce similaire - UG18DCT |
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Description similaire - UG18DCT |
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