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M30302FAPFP Fiches technique(PDF) 42 Page - Renesas Technology Corp

No de pièce M30302FAPFP
Description  SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
PDF  57 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

M30302FAPFP Fiches technique(HTML) 42 Page - Renesas Technology Corp

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M16C/30P Group
5. Electrical Characteristics
Rev.1.22
Mar 30, 2007
Page 42 of 53
REJ03B0088-0122
NOTES:
1.
Referenced to VCC1=VCC2=2.7 to 3.3V, VSS = 0V at Topr =
−20 to 85°C / −40 to 85°C, f(XIN)=10MHz unless otherwise
specified.
2.
With one timer operated using fC32.
3.
This indicates the memory in which the program to be executed exists.
Table 5.28
Electrical Characteristics (2) (1)
Symbol
Parameter
Measuring Condition
Standard
Unit
Min.
Typ.
Max.
ICC
Power Supply Current
(VCC1=VCC2=2.7V to 3.6V)
In single-chip
mode, the output
pins are open and
other pins are VSS
Mask ROM
f(XIN)=10MHz
No division
811
mA
One Time
Flash
f(XIN)=10MHz,
No division
813
mA
Flash
Memory
f(XIN)=10MHz,
No division
813
mA
Flash Memory
Program
f(XIN)=10MHz,
VCC1=3.0V
12
mA
One Time
Flash Program
f(XIN)=10MHz,
VCC1=3.0V
12
mA
Flash Memory
Erase
f(XIN)=10MHz,
VCC1=3.0V
22
mA
Mask ROM
f(XCIN)=32kHz
Low power dissipation
mode, ROM (3)
25
μA
One Time
Flash
f(XCIN)=32kHz
Low power dissipation
mode, RAM (3)
25
μA
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory (3)
350
μA
Flash Memory
f(XCIN)=32kHz
Low power dissipation
mode, RAM (3)
25
μA
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory (3)
420
μA
Mask ROM
One Time Flash
Flash Memory
f(XCIN)=32kHz
Wait mode (2),
Oscillation capability High
6.0
μA
f(XCIN)=32kHz
Wait mode (2),
Oscillation capability Low
1.8
μA
Stop mode
Topr =25
°C
0.7
3.0
μA



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