GE730 datasheet(2/5 Pages) GTM

2 / 5 page

GE730

Page: 2/5

ISSUED DATE :2005/08/30

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

400

VGS=0, ID=1mA

Breakdown Voltage Temperature Coefficient

BVDSS /

0.36

V/ :

Reference to 25 : , ID=1mA

Gate Threshold Voltage

VGS(th)

2.0

4.0

VDS=VGS, ID=250uA

Forward Transconductance

gfs

VDS=10V, ID=2.75A

Gate-Source Leakage Current

IGSS

D100

VGS= D30V

Drain-Source Leakage Current(Tj=25 : )

VDS=400V, VGS=0

Drain-Source Leakage Current(Tj=150 : )

IDSS

100

VDS=320V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=2.75A

Total Gate Charge3

Gate-Source Charge

Qgs

3.7

Gate-Drain (“Miller”) Change

Qgd

ID=5.5A

VDS=320V

VGS=10V

Turn-on Delay Time3

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=200V

ID=5.5A

VGS=10V

RG=10 Ł

RD=36 Ł

Input Capacitance

Ciss

565

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage3

VSD

1.5

IS=5.5A, VGS=0V, Tj=25 :

Continuous Source Current (Body Diode)

5.5

VD=VG=0V, VS=1.5V

Pulsed Source Current (Body Diode)

ISM

Notes: 1. Pulse width limited by safe operating area.

2. Staring Tj=25 : , VDD=50V, L=15mH, RG=25 , IAS=5.5A.

3. Pulse width 300us, duty cycle 2%.

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