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25C160-/P Fiches technique(PDF) 2 Page - Microchip Technology

No de pièce 25C160-/P
Description  16K SPI Bus Serial EEPROM
PDF  22 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

25C160-/P Fiches technique(HTML) 2 Page - Microchip Technology

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25AA160/25LC160/25C160
DS21231D-page 2
 2004 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C
ESD protection on all pins ......................................................................................................................................... 4 KV
1.1
DC Characteristics
† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
TA = -40°C to +85°C
VCC = 1.8V to 5.5V
Automotive (E): TA = -40°C to +125°C VCC = 4.5V to 5.5V (25C160 only)
Param.
No.
Sym.
Characteristics
Min.
Max.
Units
Conditions
D1
VIH1
High-level input
voltage
2.0
VCC+1
V
VCC
≥ 2.7V (Note)
D2
VIH2
0.7 VCC
VCC+1
V
VCC< 2.7V (Note)
D3
VIL1
Low-level input
voltage
-0.3
0.8
V
VCC
≥ 2.7V (Note)
D4
VIL2
-0.3
0.3 VCC
VVCC < 2.7V (Note)
D5
VOL
Low -level output
voltage
—0.4
V
IOL = 2.1 mA
D6
VOL
—0.2
V
IOL = 1.0 mA, VCC < 2.5V
D7
VOH
High-level output
voltage
VCC -0.5
V
IOH = -400
µA
D8
ILI
Input leakage current
-10
10
µACS = VCC, VIN = VSS TO VCC
D9
ILO
Output leakage
current
-10
10
µACS = VCC, VOUT = VSS TO VCC
D10
CINT
Internal Capacitance
(all inputs and
outputs)
—7
pF
TA = 25°C, CLK = 1.0 MHz,
VCC = 5.0V (Note)
D11
ICC Read
Operating Current
1
500
mA
µA
VCC = 5.5V; FCLK = 3.0 MHz;
SO = Open
VCC = 2.5V; FCLK = 2.0 MHz;
SO = Open
D12
ICC Write
5
3
mA
mA
VCC = 5.5V
VCC = 2.5V
D13
ICCS
Standby Current
5
1
µA
µA
CS = VCC = 5.5V, Inputs tied to VCC or
VSS
CS = VCC = 2.5V, Inputs tied to VCC or
VSS
Note:
This parameter is periodically sampled and not 100% tested.



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