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SVT034R0NL5TR Fiches technique(PDF) 2 Page - Silan Microelectronics Joint-stock |
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SVT034R0NL5TR Fiches technique(HTML) 2 Page - Silan Microelectronics Joint-stock |
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2 / 9 page ![]() Silan Microelectronics SVT034R0NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25 C) Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Drain-source Voltage VDS -- 30 -- -- V Gate-source Voltage VGS -- -20 -- 20 V Drain Current ID TC=25C -- -- 100 A TC=100C -- -- 64 A Drain Current Pulsed (Note 1) IDM TC=25C -- -- 400 A Power Dissipation (Note 2) PD TC=25C -- -- 65 W Single Pulsed Avalanche Energy L=0.1mH EAS VDD=24V, RG=25, starting temperature TJ=25C -- -- 120 mJ L=0.5mH -- -- 169 Single Pulsed Current IAS L=0.1mH -- -- 49 A L=0.5mH -- -- 26 Operation Junction Temperature Range TJ -- -55 -- 150 C Storage Temperature Range Tstg -- -55 -- 150 C THERMAL CHARACTERISTICS Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Thermal Resistance, Junction-case, Bottom RθJC -- -- -- 1.92 C/W Thermal Resistance, Junction-ambient RθJA -- -- -- 50.0 C/W Soldering Temperature (SMD) Tsold Reflow soldering:10±1sec,3times -- -- 260 C |
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