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SVT034R0NL5 Fiches technique(PDF) 3 Page - Silan Microelectronics Joint-stock

No de pièce SVT034R0NL5
Description  100A, 30V N-CHANNEL MOSFET
PDF  9 Pages
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Fabricant  SILAN [Silan Microelectronics Joint-stock]
Site Internet  http://www.silan.com.cn
Logo SILAN - Silan Microelectronics Joint-stock

SVT034R0NL5 Fiches technique(HTML) 3 Page - Silan Microelectronics Joint-stock

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Silan
Microelectronics
SVT034R0NL5_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Rev.:1.2
http: //www.silan.com.cn
Page 3 of 9
ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25
C)
Static characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
--
--
V
Drain-source Leakage Current
IDSS
VDS=30V, VGS=0V, TJ=25C
--
--
1.0
µA
VDS=30V, VGS=0V, TJ=125C
--
1.5
--
Gate-source Leakage Current
IGSS
VGS=±20V, VDS=0V
--
--
±100
nA
Gate Threshold Voltage
VGS(th)
VGS=VDS, ID=250µA
1.2
--
2.2
V
Static Drain-source
On State Resistance
RDS(on)
VGS=10V, ID=20A
--
3.0
4.0
m
VGS=4.5V, ID=16A
--
5.4
6.8
m
Gate Resistance
RG
f=1MHz
--
3.8
--
Dynamic characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Input Capacitance
Ciss
f=1MHz, VGS=0V, VDS=15V
--
2289
--
pF
Output Capacitance
Coss
--
340
--
Reverse Transfer Capacitance
Crss
--
294
--
Turn-on Delay Time
td(on)
VDD=20V, VGS=10V, RG=6Ω,
ID=20A
(Notes 3, 4)
--
9.4
--
ns
Turn-on Rise Time
tr
--
69
--
Turn-off Delay Time
td(off)
--
71
--
Turn-off Fall Time
tf
--
102
--
Total Gate Charge
Qg
VDD=15V, VGS=4.5V, ID=20A
(Notes 3, 4)
--
23
--
nC
Gate-source Charge
Qgs
--
7.6
--
Gate-drain Charge
Qgd
--
9.8
--
Gate-plateau Voltage
Vplateau
--
3.2
--
V
Reverse diode characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Continuous Diode Forward Current
IS
Integral reverse P-N junction
diode in the MOSFET
--
--
100
A
Diode Pulse Current
IS,pulse
--
--
400
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
--
--
1.4
V
Reverse Recovery Time
Trr
IS=20A, VGS=0V,dIF/dt=100A/µs
(Note 3)
--
18
--
ns
Reverse Recovery Charge
Qrr
--
11
--
nC
Notes:
1.
Pulse time 5µs;
2.
The dissipation power will change with temperature, derating above 25
C: 0.52W/C;
3.
Pulse Test:
Pulse width ≤300μs, Duty cycle≤2%;
4.
Essentially independent of operating temperature.



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