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Moteur de recherche de fiches techniques de composants électroniques |
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APTM120U10DAG Fiches technique(PDF) 1 Page - Microsemi Corporation |
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APTM120U10DAG Fiches technique(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM120U10DAG www.microsemi.com 1 – 6 SK DK G SD D S G SK Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 116 ID Continuous Drain Current Tc = 80°C 86 IDM Pulsed Drain current 464 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 120 m Ω PD Maximum Power Dissipation Tc = 25°C 3290 W IAR Avalanche current (repetitive and non repetitive) 24 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3200 mJ VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Single switch with Series diodes MOSFET Power Module |
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