9N70-TD2

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

www.unisonic.com.tw

QW-R205-579.A



ABSOLUTE MAXIMUM RATINGS (T

C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

700

V

Gate to Source Voltage

VGSS

±30

V

Continuous Drain Current

Continuous

ID

9

A

Pulsed (Note 2)

IDM

18

A

Avalanche Energy

Single Pulsed

(Note 3)

EAS

72.2

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

PD

55

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L = 10mH, IAS = 3.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤9.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

110

°C/W

Junction to Case

θJC

2.27 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.