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APTGF200U120DG Fiches technique(PDF) 6 Page - Microsemi Corporation |
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APTGF200U120DG Fiches technique(HTML) 6 Page - Microsemi Corporation |
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6 / 6 page ![]() APTGF200U120DG www.microsemi.com 6 – 6 0 50 100 150 200 250 300 350 400 450 0 400 800 1200 Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Hard switching ZCS ZVS 0 20 40 60 80 100 120 20 60 100 140 180 220 IC, Collector Current (A) Operating Frequency vs Collector Current VCE = 600V D = 50% RG = 1.2Ω TJ = 125°C TC= 75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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