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APTDF200H120G Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce APTDF200H120G
Description  Diode Full Bridge Power Module
PDF  4 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF200H120G Fiches technique(HTML) 2 Page - Microsemi Corporation

  APTDF200H120G Datasheet HTML 1Page - Microsemi Corporation APTDF200H120G Datasheet HTML 2Page - Microsemi Corporation APTDF200H120G Datasheet HTML 3Page - Microsemi Corporation APTDF200H120G Datasheet HTML 4Page - Microsemi Corporation  
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APTDF200H120G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 200A
2.4
3.0
IF = 300A
2.7
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
1.8
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 125°C
600
µA
CT
Junction Capacitance
VR = 1200V
220
pF
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
trr
Reverse Recovery Time
IF=1A,VR=30V
di/dt = 200A/µs
Tj = 25°C
45
ns
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
480
ns
Tj = 25°C
2.1
Qrr
Reverse Recovery Charge
Tj = 125°C
10.5
µC
Tj = 25°C
12
IRRM
Reverse Recovery Current
IF = 200A
VR = 800V
di/dt = 400A/µs
Tj = 125°C
38
A
trr
Reverse Recovery Time
210
ns
Qrr
Reverse Recovery Charge
19
µC
IRRM
Reverse Recovery Current
IF = 200A
VR = 800V
di/dt=2000A/µs
Tj = 125°C
140
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.285 °C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g



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