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APTDF100H170G Fiches technique(PDF) 3 Page - Microsemi Corporation

No de pièce APTDF100H170G
Description  Diode Full Bridge Power Module
PDF  3 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF100H170G Fiches technique(HTML) 3 Page - Microsemi Corporation

  APTDF100H170G Datasheet HTML 1Page - Microsemi Corporation APTDF100H170G Datasheet HTML 2Page - Microsemi Corporation APTDF100H170G Datasheet HTML 3Page - Microsemi Corporation  
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APTDF100H170G
www.microsemi.com
3 - 3
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
50 A
100 A
200 A
200
300
400
500
600
700
800
0
1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
TJ=125°C
VR=900V
QRR vs. Current Rate Charge
50 A
100 A
200 A
20
30
40
50
60
70
80
0
1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
TJ=125°C
VR=900V
IRRM vs. Current Rate of Charge
50 A
100 A
200 A
50
100
150
200
250
300
350
400
0
1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
TJ=125°C
VR=900V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature (ºC)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=150°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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