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APTDF100H60G Fiches technique(PDF) 1 Page - Microsemi Corporation

No de pièce APTDF100H60G
Description  Diode Full Bridge Power Module
PDF  4 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF100H60G Fiches technique(HTML) 1 Page - Microsemi Corporation

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APTDF100H60G
www.microsemi.com
1 - 4
+
-
AC1
AC2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VR
Maximum DC reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
TC= 25°C
135
IF(AV)
Maximum Average Forward
Current
Duty cycle = 50%
TC= 80°C
100
IF(RMS)
RMS Forward Current
Duty cycle = 50%
TC = 45°C
135
IFSM
Non-Repetitive Forward Surge Current
8.3ms
TC = 45°C
500
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
AC1
+
AC2
-
VRRM = 600V
IC = 100A @ Tc = 80°C
Application
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Diode Full Bridge
Power Module


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