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APT6010B2FLL Fiches technique(PDF) 3 Page - Microsemi Corporation

No de pièce APT6010B2FLL
Description  POWER MOS 7 FREDFET
PDF  5 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6010B2FLL Fiches technique(HTML) 3 Page - Microsemi Corporation

  APT6010B2FLL Datasheet HTML 1Page - Microsemi Corporation APT6010B2FLL Datasheet HTML 2Page - Microsemi Corporation APT6010B2FLL Datasheet HTML 3Page - Microsemi Corporation APT6010B2FLL Datasheet HTML 4Page - Microsemi Corporation APT6010B2FLL Datasheet HTML 5Page - Microsemi Corporation  
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Typical Performance Curves
APT6010B2FLL_LFLL
VGS=15&10V
8V
6V
5.5V
6.5V
7V
7.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
80
60
40
20
0
60
50
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
VGS=10V
VGS=20V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @ 27A
I
D = 27A
V
GS = 10V
0.0271
0.0656
0.859
0.009
0.0202
0.293
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.



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