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ISG2106 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce ISG2106
Description  Ultrafast IGBT
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2106 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2106
eq SGL160N60UFD
Ultrafast IGBT
www.iscsemi.com
1
DESCRIPTION
•
High speed switching
•
High input impedance
•
Low saturation voltage
APPLICATIONS
•
AC & DC motor controls
•
General purpose inverters
•
Servo controls
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
160
A
IC
Collector Current-Continuous
@ TC=100℃
80
A
ICM
Pulsed Collector Current
300
A
IF
Diode Forward Current @ TC100℃
25
A
IFM
Diode Maximum Forward Current
280
A
PD
Power Dissipation @TC=25℃
250
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
IGBT
0.5
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
diode
0.83
℃
/W


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