FDN339 datasheet(1/5 Pages) EVVOSEMI

No de pièce	FDN339

Description	N-Channel 2.5 V (D-S) MOSFET

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Fabricant	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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General Description

This N-Channel 2.5V specified MOSFET

is

has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for superior

switching performance.

Applications

DC/DC converter

Load switch

Absolute Maximum Ratings T

A = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current

- Continuous

(Note 1a)

3A

- Pulsed

20

PD

Power Dissipation for Single Operation

(Note 1a)

0.5

W

(Note 1b)

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

GS

D

N-Channel 2.5 V (D-S) MOSFET

FDN339

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Rev:2023A2

1

Features

VDS (V) = 20V

RDS(ON)

38m

(V GS = 4.5V)

RDS(ON)

50m

(V GS = 2.5V)

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