FDN327 datasheet(1/5 Pages) EVVOSEMI

No de pièce	FDN327

Description	N-Channel 2.5 V (D-S) MOSFET

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Fabricant	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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Applications

Load switch

Battery protection

Power management

D

S

G

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

± 8

V

ID

Drain Current

– Continuous

(Note 1a)

2

A

– Pulsed

8

Power Dissipation for Single Operation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

SOT–23

1. GATE

2. SOURCE

3. DRAIN

N-Channel 2.5 V (D-S) MOSFET

FDN327

Rev:2023A2

1

Features

VDS (V) = 20V

RDS(ON)

125m

(V GS = 4.5V)

RDS(ON)

190m

(V GS = 2.5V)

RDS(ON)

80m

(VGS = 1.8V)

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FDN327 Fiches technique(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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