NXP Semiconductors

A5M20TG042

Airfast Power Amplifier Module

A5M20TG042

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Product data sheet

Rev. 1 — 20 May 2024

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9 Lifetime

Table 6. Lifetime

Characteristic

Symbol

Value

Unit

Mean time to failure

(Case temperature 125°C, 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc)

MTTF

> 10

Years

10 Thermal characteristics

Table 7. Thermal characteristics

Characteristic

Symbol

Value

Unit

Thermal resistance by infrared measurement, active die surface-to-case

(Case temperature 115°C, PD = 22.7 W)

RθSC (IR)

1.9[1]

°C/W

Thermal resistance by finite element analysis, channel-to-case

(Case temperature 125°C, PD = 22.7 W)

RθCHC

(FEA)

3.4[2]

°C/W

[1] Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to https://www.nxp.com/RF and search

for AN1955. High conductivity thermal interface used.

[2] RθCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be

estimated by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius,

A = –11.6 and B = 9129.

11 ESD protection characteristics

Table 8. ESD protection characteristics

Test methodology

Class

Human Body Model (per JS-001-2023)

1B

Charge Device Model (per JS-002-2022)

C2a

12 Moisture sensitivity level

Table 9. Moisture sensitivity level

Test methodology

Rating

Package peak temperature

Unit

Per JESD22−A113, IPC/JEDEC J-STD-020

3

250

°C