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STGD5H60DF Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce STGD5H60DF
Description  Trench Field-stop IGBT
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STGD5H60DF Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2085
eq STGD5H60DF
Trench Field-stop IGBT
www.iscsemi.com
1
DESCRIPTION
· High ruggedness, temperature stable behavior
· Very low VCEsat
· Very tight parameter distribution
· Tight parameter distribution
APPLICATIONS
· Induction cooker
· Microwave ovens
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1400
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC= 25℃
68
A
IC
Collector Current-Continuous
@ TC= 100℃
45
A
ICM
Pulsed Collector Current Note1
200
A
PD
Power Dissipation @TC=25℃
246
W
TJ
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~175
℃


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