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IPB010N06N Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce IPB010N06N
Description  N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPB010N06N Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  IPB010N06N Datasheet HTML 1Page - Inchange Semiconductor Company Limited IPB010N06N Datasheet HTML 2Page - Inchange Semiconductor Company Limited IPB010N06N Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISF1187
eq IPB010N06N
N-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 180A@ TC=25℃
· Drain Source Voltage -VDSS= 60V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 1mΩ(Max)@VGS= 10V
APPLICATIONS
· DC-DC Converters
· Automatic Test Equipment
· High-Side Switching
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
180
A
IDM
Drain Current-Single Pulse
720
A
PD
Total Dissipation @TC=25℃
300
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.5
℃
/W


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