| Moteur de recherche de fiches techniques de composants électroniques |
|
APM4953 Fiches technique(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
|
|
|||||||||||||||||||||||||||||
APM4953 Fiches technique(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
|
1 / 6 page ![]() APM4953 Absolute Maximum Ratings (T A=25 oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current (Continuous) -5.3 A IDM Drain Current (Pulsed) a -20 A PD Total Power Dissipation @TA=25 oC 2.0 W IS Maximum Diode Forward Current -1.9 A Tj, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RθJA Thermal Resistance Junction to Ambient (PCB mounted) b 50 °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in 2 2oz Cu PCB board -30V P-Channel MOSFET APM4953 Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON) < 41mΩ (VGS = -10V) RDS(ON) < 75mΩ (VGS = -4.5V) Rev:2023A2 1 G1 D1 S1 G2 D2 S2 G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 |
Numéro de pièce similaire - APM4953 |
|
Description similaire - APM4953 |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |