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2SC3356-R25 Fiches technique(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

No de pièce 2SC3356-R25
Description  NPN Transistors
PDF  4 Pages
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Fabricant  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Site Internet  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

2SC3356-R25 Fiches technique(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Typical Characterisitics
0
2
1
5
4
3
7
6
0.5
1
5
10
50 70
IC-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
5
4
3
2
1
0
18
15
12
6
3
0
2
4
6
8
10
VCE-Collector to Emitter Voltage-V
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
f = 1.0 GHz
IC = 20 mA
|S21e|2
NF
50
00
60
70
80
90
100
110
120
130
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.33
0.35
0.37
0.39
0.41
0.43
50
10
6.0
4.0
3.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0.2
0.8
0.6
0.4
0.4
REACTANCE COMPONENT
( R––––
ZO
)
EN
T
20
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90°
0°
30°
−
30°
60°
−
60°
180°
150°
−
150°
120°
−
120°
−
90°
5
10
15
20
S21e
0.2 GHz
2.0 GHz
90°
0°
30°
−
30°
60°
−
60°
180°
150°
−
150°
120°
−
120°
−
90°
0.05 0.1
0.15 0.2 0.25
S12e
0.2 GHz
2.0 GHz
S12e-FREQUENCY
VCE = 10 V
200 MHz Step
CONDITION
VCE = 10 V
IC = 20 mA
CONDITION
VCE = 10 V
IC = 20 mA
CONDITION
0.2 GHz
0.2 GHz
0.2 GHz
2.0 GHz
IC = 20 mA
S22e
S11e
IC = 20 mA
IC = 5 mA
IC = 5 mA
2SC3356
3
Rev:2022A2



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