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PLB16004U Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PLB16004U
Description  Microwave power transistor
PDF  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PLB16004U Fiches technique(HTML) 3 Page - NXP Semiconductors

  PLB16004U Datasheet HTML 1Page - NXP Semiconductors PLB16004U Datasheet HTML 2Page - NXP Semiconductors PLB16004U Datasheet HTML 3Page - NXP Semiconductors PLB16004U Datasheet HTML 4Page - NXP Semiconductors PLB16004U Datasheet HTML 5Page - NXP Semiconductors PLB16004U Datasheet HTML 6Page - NXP Semiconductors PLB16004U Datasheet HTML 7Page - NXP Semiconductors PLB16004U Datasheet HTML 8Page - NXP Semiconductors PLB16004U Datasheet HTML 9Page - NXP Semiconductors Next Button
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1997 Feb 18
3
Philips Semiconductors
Product specification
Microwave power transistor
PLB16004U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.3 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCES
collector-emitter voltage
RBE =0
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3V
IC
DC collector current
−
0.5
A
Ptot
total power dissipation
Tmb =75 °C
−
9W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
−
235
°C
handbook, halfpage
050
50
100
200
2
0
MLC457
150
T
( C)
o
mb
Ptot
(W)
4
6
8
10
Fig.2 Power derating curve.



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