77 GHz GaAs Multi-Throw PIN Diode Switch

MA4GC6772

V 4.00

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2

Parameter

Value

Operating Temperature

-25 °C to +85 °C

Storage Temperature

-65 °C to +150 °C

D.C. Bias Current

+15 mA per Diode

D. C. Reverse Voltage

-15 Volts @ -10

µA

RF C.W. Incident Power

+ 23 dBm C.W.

Mounting Temperature

+300 °C for 10 seconds

Absolute Maximum Ratings

1

1. Exceeding any of these values may result in permanent

damage

MA4GC6772

Parameters

Conditions

Bias Condition

Comments

-5 V

+10 mA

Insertion Loss

J4 to (J1-J3)

J5 to (J1-J3)

J5 to J6

3.8 dB

4.0 dB

2.0 dB

B1, B2, B3, B4

B1, B2, B3, B5

B1, B2, B3, B4

B5

B4

B5

• Receive State

• Transmit State

• Source to LO Loss

Isolation

J4 to (J1-J3)

J5 to (J1-J3)

J1, J2, J3

J5 to J4

24 dB

30 dB

24 dB

35 dB

B1, B2, B3, B5

B1, B2, B3, B4

-

B1, B2, B3, B4

B4

B5

-

B5

• Transmit State

• Receive State

• At any Switch State

• Receive State

VSWR

All Ports

1.5:1

Same as Loss

Same as Loss

• Low Loss Condition only (Reflective in

Isolation Mode)

Switching Speed

10% - 90%

RF Voltage

2 nS

0 to 5 V TTL

0 to 5 V TTL

• Switching Speed is Driver Dependent

Avg.

Parameters

Units

Minimum

Specification

Typical

Specification

Bias Conditions

Forward Voltage, +Vf

V

1.15

1.25

1.40

+10 mA per Diode

Leakage Current, -Ir

nA

-200

-20

-15 V per Diode

DC Slope Resistance

Ω

4.8

6.4

+10 mA & 11 mA per Diode

Maximum

Specification