2SD1222-252 datasheet(1/2 Pages) ISC

No de pièce	2SD1222-252

Description	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SD1222

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 40V(Min)

·

DC Current Gain-

: hFE= 2000(Min)@ IC= 1A

APPLICATIONS

·

DC-DC converter,relay drivers,lamp drivers,motor

drivers, inverter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

3

A

IB

Base current

0.3

A

PC

Collector Power Dissipation

1

W

Collector Power Dissipation

@TC= 25℃

15

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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