2SC5682 datasheet(1/2 Pages) ISC

No de pièce	2SC5682

Description	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC5682

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 800V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):3.0V(Max) @IC= 14.4A

APPLICATIONS

· Designed for power amplifier,high speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

20

A

ICP

Collector Current-Pulse

40

A

PC

Total Power Dissipation

@ TC=25℃

95

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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