2SD1815 datasheet(1/3 Pages) ISC

No de pièce	2SD1815

Description	Silicon NPN Power Transistor

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SD1815

www.iscsemi.com

1

FEATURES

·High current capacity

·Low collector-to-emitter saturation voltage

·Fast switching speed

APPLICATIONS

· Strobes,voltage regulators,relay drivers,lamp drivers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICP

Collector Current-Pulse

6

A

PC

Collector Power Dissipation

@ TC=25℃

20

W

Collector Power Dissipation

@ Ta=25℃

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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