PJS6806 datasheet(1/6 Pages) PANJIT

No de pièce	PJS6806

Description	30V N-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	PANJIT [Pan Jit International Inc.]

Site Internet	http://www.panjit.com.tw

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1 / 6 page

PJS6806

January 20,2022

PJS6806-REV.04

Page 1

30V N-Channel Enhancement Mode MOSFET

Voltage

30 V

Current

4A

SOT-23 6L

Unit : inch(mm)

Features

 RDS(ON) , VGS@10V, ID@4.0A<48m

Ω

 RDS(ON) , VGS@4.5V, ID@2.8A<70m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: ST6

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+20

V

Continuous Drain Current

ID

4

A

Pulsed Drain Current

IDM

16

A

Power Dissipation

Ta=25oC

PD

1.25

W

Derate above 25oC

10

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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