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LEAP1MS Fiches technique(PDF) 4 Page - OSRAM GmbH |
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LEAP1MS Fiches technique(HTML) 4 Page - OSRAM GmbH |
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4 / 21 page ![]() LE A P1MS DATASHEET DATASHEET 4 | Version 0.1 | 2022-09-26 Characteristics T Board = 25 °C; IF = 4000 mA; f = 1000 Hz; D = 0.25 Parameter Symbol Values Peak Wavelength λ peak typ. 622 nm Dominant Wavelength 3) λ dom min. typ. max. 612 nm 614 nm 618 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 17 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 1.95 x 1.35 mm² Partial Flux acc. CIE 127:2007 4) I F = 4000 mA Φ E/V, 120° typ. 0.77 Forward Voltage 5) I F = 4000 mA V F min. typ. max. 5.6 V 6.0 V 7.0 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint R thJS real typ. 1.3 K / W Electrical thermal resistance junction/solderpoint with efficiency η e = 22 % R thJS elec. typ. 1.0 K / W |
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