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ZSH560 Fiches technique(PDF) 2 Page - Zetex Semiconductors |
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ZSH560 Fiches technique(HTML) 2 Page - Zetex Semiconductors |
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2 / 5 page ![]() TEST CONDITIONS (Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3)) COMPARATOR PARAMETER SYMBOL MIN TYP. MAX. UNITS Threshold Voltage Low state output (Vcc increasing) VIL 4.5 4.61 4.7 V Threshold Voltage High state output (Vcc decreasing) VIH 4.5 4.59 4.7 V Hysteresis VH 0.01 0.02 0.05 V OUPUT PARAMETER SYMBOL MIN TYP. MAX. UNITS Output source saturation: VOH (Vcc=4.0V, Isource=8.0mA) VCC-1.3 V (Vcc=4.0V, Isource=2.0mA) VCC-1.2 V (Vcc=1.0V, Isource=2 µA) VCC-0.4 V Onstate output source current (Vcc =4.0V, Output=0V) Isource 10 20 50 mA Offstate output leakage current (Vcc =5.0V, Output=0V) Ioh 0.02 0.5 µA Clamp diode forward voltage (If=10mA) Vf 0.6 1.2 1.5 V Propagation delay (Vin 5V to 4V, Rl=10k, Tamb=25°C) Td 1.5 µs TOTAL DEVICE PARAMETER SYMBOL MIN TYP. MAX. UNITS Operating input voltage range Vcc 1.0 to 6.5 V Quiescent input current (Vcc=5V) Iq 135 200 µA Note: 1. Maximum package power dissipation must be observed. 2. Maximum power dissipation for the SOT223 package is calculated assuming that the device is mounted on a PCB measuring 2 inches square. 3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as close to ambient as possible. ZSH560 ABSOLUTE MAXIMUM RATING Input Supply Voltage -1 to 10V Offstate Output Voltage 10V Onstate Output Source Current(Note 1) Internally limited Clamp Diode Forward Current(Note 1)100mA Operating Junction Temperature 150°C Operating Temperature -40 to 85°C Storage Temperature -55 to 150°C Power Dissipation TO92 780mW SOT223 2W(Note 2) 4-335 |
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