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ZXMN2B01F Fiches technique(PDF) 2 Page - Zetex Semiconductors

No de pièce ZXMN2B01F
Description  20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability
PDF  8 Pages
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZXMN2B01F Fiches technique(HTML) 2 Page - Zetex Semiconductors

  ZXMN2B01F Datasheet HTML 1Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 2Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 3Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 4Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 5Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 6Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 7Page - Zetex Semiconductors ZXMN2B01F Datasheet HTML 8Page - Zetex Semiconductors  
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ZXMN2B01F
Issue 2 - March 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGS
±8
V
Continuous drain current
@ VGS= 4.5V; Tamb=25°C(b)
ID
2.4
A
@ VGS= 4.5V; Tamb=70°C(b)
1.9
A
@ VGS= 4.5V; Tamb=25°C(a)
2.1
A
Pulsed drain current(c)
IDM
11.8
A
Continuous source current (body diode)(b)
IS
1.4
A
Pulsed source current (body diode)(c)
ISM
11.8
A
Power dissipation at Tamb =25°C(a)
PD
625
mW
Linear derating factor
5
mW/°C
Power dissipation at Tamb =25°C(b)
PD
806
mW
Linear derating factor
6.4
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
200
°C/W
Junction to ambient(b)
R JA
155
°C/W



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