STB4080C datasheet(1/4 Pages) SMCDIODE

No de pièce	STB4080C

Description	SCHOTTKY RECTIFIER

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	SMCDIODE [SMC Diode Solutions Co. LTD]

Site Internet	https://www.smc-diodes.com

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1 / 4 page

Technical Data

Data Sheet N1458, Rev. A

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

STB4080C

STB4080C SCHOTTKY RECTIFIER

* Pulse width < 300 µs, duty cycle < 2%

Features

Circuit Diagram

Applications

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

-

80

V

Average Rectified Forward Current

(Per Device)

IF (AV)

50% duty cycle @Tc=105°C,

rectangular wave form

20(Per Leg)

A

40(Per Device)

Peak One Cycle Non-Repetitive Surge

Current(Per Leg)

IFSM

8.3ms, Half Sine pulse

300

A

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ.

Max. Units

Forward Voltage Drop

(Per Leg) *

VF1

@ 5A, Pulse, TJ = 25 C

@ 10A, Pulse, TJ = 25 C

@ 20A, Pulse, TJ = 25 C

0.45

0.54

0.69

-

0.75

V

VF2

@ 5A, Pulse, TJ = 125 C

@ 10A, Pulse, TJ = 125 C

@ 20A, Pulse, TJ = 125 C

0.40

0.52

0.65

-

0.70

V

Reverse Current (Per Leg) *

IR1

@VR = rated VR, TJ = 25C

0.02

1.0

mA

IR2

@VR = rated VR, TJ = 125C

14

75

mA

Junction Capacitance(Per Leg)

CT

@VR = 5V, TC = 25 C, fSIG = 1MHz

811

-

pF



150C TJ operation



Ultralow forward voltage drop



High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance



High frequency operation



Guard ring for enhanced ruggedness and long term reliability



Trench MOS Schottky technology



This is a Pb − Free Device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon request



Switching power supply



Converters



Free-Wheeling diodes



Reverse battery protection

D2PAK

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