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ST20100S Fiches technique(PDF) 1 Page - SMC Diode Solutions Co. LTD |
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ST20100S Fiches technique(HTML) 1 Page - SMC Diode Solutions Co. LTD |
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1 / 4 page ![]() Technical Data Data Sheet N1880, Rev. A China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com ST20100S ST20100S SCHOTTKY RECTIFIER Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 10A, Pulse, TJ = 25 C @ 20A, Pulse, TJ = 25 C 0.58 0.74 - 0.78 V VF2 @ 10A, Pulse, TJ = 125 C @ 20A, Pulse, TJ = 125 C 0.53 0.64 - 0.68 V Reverse Current* IR1 @VR = rated VR TJ = 25 C 0.02 0.1 mA Reverse Current* IR2 @VR = rated VR TJ = 125 C 13 35 mA Junction Capacitance CT @VR = 5V, TC = 25 C fSIG = 1MHz 950 - pF * Pulse width < 300 µs, duty cycle < 2% Features Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 100 V Average Rectified Forward Current IF (AV) 50% duty cycle @TC=80°C, rectangular wave form 20 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3ms, Half Sine pulse, TJ = 25 C 270 A Electrical Characteristics: 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Trench MOS Schottky technology Terminals finish: 100% Pure Tin This is a Halogen Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection TO-277B |
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