ISCF8024

SiC N-Channel MOSFET

www.iscsemi.com

3

GATE CHARGE CHARACTERISTICS(TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

QGS

Gate to Source Charge

VGS= - 5/+20V

ID= 30A,

VDS= 1200V,

--

79

--

nC

QGD

Gate to Drain Charge

--

99

--

QG

Total Gate Charge

--

304

--

Vpl

Gate plateau voltage

--

7.5

--

V

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