2N2907 datasheet(1/5 Pages) STMICROELECTRONICS

No de pièce	2N2907

Description	GENERAL PURPOSE AMPLIFIERS AND SWITCHES

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2N2905

2N2907

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

DESCRIPTION

The 2N2905 and 2N2907 are silicon planar

epitaxial PNP transistors in Jedec TO-39 (for

2N2905) and in Jedec TO-18 (for 2N2907) metal

case. They are designed for high speed saturated

switching and general purpose application.

INTERNAL SCHEMATIC DIAGRAM

November 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collect or-Base Voltage (IE =0)

-60

V

VCEO

Collect or-Emitt er Voltage (IB =0)

-40

V

VEBO

Emitt er-Base Voltage (IC =0)

-5

V

IC

Collect or Current

-0. 6

A

Ptot

Total Dissipation at Tamb

≤ 25 oC

for 2N2905

for 2N2907

at Tcase

≤ 25 oC

for 2N2905

for 2N2907

0.6

0.4

3

1.8

W

Tstg

St orage Temperature

-65 t o 200

oC

Tj

Max. Operating Junction Temperature

200

oC

TO-18

TO-39

2N2905 approved to

CECC 50002-102,

2N2907

approved to

CECC

50002-103

available on request.

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