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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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12CWQ10FN Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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12CWQ10FN Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifier 12CWQ10FN www.iscsemi.com 1 FEATURES · Ultrafast recovery time · Low forward voltage,high efficiency · Low forward voltage drop APPLICATIONS Disk drives Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery charging ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current TC=160℃ 12 A IFSM Non-repetitive Peak Surge Current (8.3ms,half sine pulse) 130 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃ /W |
Numéro de pièce similaire - 12CWQ10FN |
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Description similaire - 12CWQ10FN |
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