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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MCP601 Fiches technique(PDF) 3 Page - Microchip Technology |
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MCP601 Fiches technique(HTML) 3 Page - Microchip Technology |
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3 / 28 page  2004 Microchip Technology Inc. DS21314F-page 3 MCP601/2/3/4 FIGURE 1-1: MCP603 Chip Select (CS) Timing Diagram. AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 50 pF. Parameters Sym Min Typ Max Units Conditions Frequency Response Gain Bandwidth Product GBWP — 2.8 — MHz Phase Margin PM — 50 — ° G = +1 V/V Step Response Slew Rate SR — 2.3 — V/µs G = +1 V/V Settling Time (0.01%) tsettle — 4.5 — µs G = +1 V/V, 3.8V step Noise Input Noise Voltage Eni —7 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —29 — nV/ √Hz f = 1 kHz eni —21 — nV/ √Hz f = 10 kHz Input Noise Current Density ini —0.6 — fA/ √Hz f = 1 kHz MCP603 CHIP SELECT CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 50 pF. Parameters Sym Min Typ Max Units Conditions DC Characteristics CS Logic Threshold, Low VIL VSS —0.2 VDD V CS Input Current, Low ICSL -1.0 — — µA CS = 0.2VDD CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH —0.7 2.0 µA CS = VDD Shutdown VSS current IQ_SHDN -2.0 -0.7 — µA CS = VDD Amplifier Output Leakage in Shutdown IO_SHDN —1 — nA CS Threshold Hysteresis HYST — 0.3 — V Internal switch Timing CS Low to Amplifier Output Turn-on Time tON —3.1 10 µs CS ≤ 0.2VDD, G = +1 V/V CS High to Amplifier Output High-Z Time tOFF —100 — ns CS ≥ 0.8VDD, G = +1 V/V, No load. CS tOFF VOUT tON Hi-Z Hi-Z IDD 2 nA (typ.) 230 µA (typ.) Output Active ISS -700 nA (typ.) -230 µA (typ.) CS 700 nA (typ.) 2nA (typ.) Current |
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