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VBE55-12NO7 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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VBE55-12NO7 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISUM6015 eq VBE55-12NO7 Single Phase Rectifier Bridge With FRED www.iscsemi.com 1 DESCRIPTION · Package with DCB ceramic base plate in low profile · Isolation voltage 3000 V~ · Planar passivated chips · Low forward voltage drop · Leads suitable for PC board soldering APPLICATIONS · Supplies for DC power equipment · Input and output rectifiers for high frequency · Battery DC power supplies · Field supply for DC motors ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VR Diode reverse voltage,TJ=25℃ 1200 V IdAV DC current,TC=85℃ 59 A IFpuls Pulsed diode current, t = 10ms(50Hz),sine TC= 45℃ 200 A TC= 150℃ 170 Pulsed diode current, t = 8.3ms(60Hz),sine TC= 45℃ 220 TC= 150℃ 190 I2t I2t for fusing, t = 10ms(50Hz),sine TC= 45℃ 200 A2S TC= 150℃ 145 I2t for fusing, t = 8.3ms(60Hz),sine TC= 45℃ 205 TC= 150℃ 150 VISOL Insulation test voltage,50/60Hz,RMS t=1Min 3000 V~ TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ Md Mounting 1.5-2.0 Nm Weight Weight Typ. 19 g |
Numéro de pièce similaire - VBE55-12NO7 |
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Description similaire - VBE55-12NO7 |
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