ISF1033

eq STD3PK50

N-Channel MOSFET

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID=1mA

500

--

--

V

VGS(th)

Gate Threshold Voltage

VDS = 10V, ID = 0.1mA

3.0

--

4.5

V

RDS(ON)

Drain-Source On-stage Resistance

VGS= 10V; ID=1.4A

--

--

4

Ω

IGSS

Gate Source Leakage Current

VGS= ±25V; VDS= 0V

--

--

±

10

uA

IDSS

Zero Gate Voltage Drain Current

VDS = 500V; VGS = 0V

--

--

1

μA

VSD

Diode Forward Voltage

IS=2.8A; VGS= 0V

--

--

1.5

V

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products.

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