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ISF1032 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce ISF1032
Description  N-Channel MOSFET
PDF  5 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1032 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISF1032
eq STB9NK80Z
N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
800
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
--
--
1
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
--
--
±
10
uA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.1mA
3.0
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 2.6A
--
--
1.8
Ω
Gfs
Forward Transconductance
VDS = 10V, ID = 2.6A
--
6.2
--
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
1080
-
pF
Coss
Output Capacitance
-
62
-
Crss
Reverse Transfer Capacitance
-
8
-
Qg
Total Gate Charge
VDD = 640V,
ID = 2.6A,
VGS = 10V
-
28
-
nC
Qgs
Gate-Source Charge
-
7
-
Qgd
Gate-Drain Charge
-
10
-
td(on)
Turn-on Delay Time
VDD = 400V,
ID = 2.6A,
RG = 25Ω,
VGS = 10V
-
42
-
ns
tr
Turn-on Rise Time
-
23
-
td(off)
Turn-off Delay Time
-
122
-
tf
Turn-off Fall Time
-
8
-
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
-
-
5.2
A
ISM
Pulsed Source Current
-
-
20.8
VSD
Diode Forward Voltage
ISD= 5.2A; VGS= 0V
-
-
1.6
V
trr
Reverse Recovery Time
VDD = 400V,IF = IS,
diF/dt = 100A /μs
-
285
-
ns
Qrr
Reverse Recovery Charge
-
3.0
-
uC



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